Epcos manufactures B82804A series of Gate Drive Transformers which are used for a galvanic isolation and gate-driving circuits to MOSFETs and IGBTs operating at switch frequencies within a range of 150KHz through several MHz.

Applications of such components include half- and full-bridge converters as well as in frequency converters or inverters.

Components are produced using a miniaturized EP5 core. The dimensions of the transformers are 8.1 x 6.7 x 5.4 mm, resulting in a significant space savings on the circuit board. EPCOS B82804A Series Gate Drive Transformers offer low stray inductances and parasitic capacitances between winding are only 25 to 95 pF. Short-term dielectric strength is tested to 1500 VDC for all types in the B82804A Series Gate Drive Transformers are designed for ambient temperatures of up to 85 °C and operating temperatures of up to 125°C.

Technical characteristics of GDT produced by Epcos[9]
L, µH	Figure	Turns ratio	R(DC)pri.-max, Ω	R(DC)sec-max, Ω	fres.min, MHz	Ordering code	Documentation
300	Figure 3 А	2.5:1:1	1,8	0,3	2,6	B82804A0304A225
317	Figure 3 А	2:1:1	1,6	0,45	2	B82804A0324A220
264	Figure 3 А	1:1:1	1,5	1,5	2,9	B82804A0264A210
350	Figure 3 В	1:1	1	0,65	1,2	B82804A0354A110
690	Figure 3 В	1.5:1	1,65	0,86	0,7	B82804A0694A115
473	Figure 3 В	2.5:1	1,5	0,3	1,7	B82804A0474A125

Additional information

The application features and B82804A GDT characteristics are shown in the article:
Prospects of the application of the new GDT transformers series (B82804A) produced by Epcos in MOSFET Gate Drive Circuits

The parameters search for GDT components produced by TDK (Epcos)

For choosing of a required GDT transformer one can use the appropriate program at the company's web site.